A large-signal GaAs MESFET model implemented on SPICE

Author

Golio, J. Michael ; Hauser, John R. ; Blakey, Peter A.

Author_Institution

Arizona State univ., Tempe, AZ, USA

Volume

1

Issue

5

fYear

1985

Firstpage

21

Lastpage

30

Abstract

A device model that predicts large-signal GaAs MESFET performance has been implemented on the large-scale circuit simulation program SPICE. The model takes into consideration drift velocity saturation, channel length modulation, and subthreshold current effects. In addition, the model depends primarily on physical (i.e. material and geometric) rather than empirical parameters. Combined with the SPICE program, a general CAD tool is formed which can be used to aid in the design of GaAs circuits such a power amplifiers, oscillators, mixers, and fast-switching digital integrated circuits. Model predictions are compared to measured device performance, and limitations of this large-signal circuit design approach are discussed.

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; digital simulation; semiconductor device models; CAD tool; III-V semiconductors; SPICE; channel length; circuit simulation program; digital integrated circuits; drift velocity saturation; large-signal GaAs MESFET model; mixers; oscillators; power amplifiers; semiconductor device models; subthreshold current; Capacitance; Gallium arsenide; Integrated circuit modeling; Logic gates; Predictive models; SPICE; Solid modeling;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/MCD.1985.6312015

Filename

6312015