Title :
Novel concepts for GaAs/LiNbO/sub 3/ layered systems and their device applications
Author :
Rotter, Markus ; Ruile, Werner ; Scholl, Gerd ; Wixforth, Achim
Author_Institution :
Sektion Phys., Ludwig Maximilians Univ., Munchen, Germany
Abstract :
Thin semiconductor quantum well structures fused onto LiNbO/sub 3/ substrates using the epitaxial lift-off (ELO) technology offer the possibility of controlling the surface acoustic wave (SAW) velocity via field effect. The tunability of the conductivity in the InGaAs quantum well results in a great change in SAW velocity, in general, accompanied by an attenuation. We show that an additional lateral modulation of the sheet conductivity reduces the SAW attenuation significantly, enhancing device performance. At high SAW intensity the bunching of electrons in the SAW potential also leads to a strong reduction of attenuation. These effects open new possibilities for voltage-controlled SAW devices. We demonstrate a novel, wireless, passive voltage sensor, which can be read out from a remote location.
Keywords :
III-V semiconductors; acoustoelectric effects; electrical conductivity; gallium arsenide; lithium compounds; piezoelectric materials; remote sensing; semiconductor quantum wells; surface acoustic wave sensors; surface acoustic waves; ultrasonic absorption; ultrasonic velocity; voltage measurement; GaAs-LiNbO/sub 3/; GaAs/LiNbO/sub 3/ layered systems; LiNbO/sub 3/; LiNbO/sub 3/ substrates; SAW attenuation; SAW velocity; attenuation; conductivity; device applications; epitaxial lift-off technology; field effect; lateral modulation; semiconductor quantum well structures; sheet conductivity; surface acoustic wave; tunability; voltage-controlled SAW devices; wireless passive voltage sensor; Acoustic waves; Attenuation; Conductivity; Gallium arsenide; Indium gallium arsenide; Substrates; Surface acoustic wave devices; Surface acoustic waves; Velocity control; Voltage;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
