Title :
Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality
Author :
Naik, Rajan S. ; Lutsky, Joseph J. ; Reif, Rafael ; Sodini, Charles G. ; Becker, Andy ; Fetter, Linus ; Huggins, Harold ; Miller, Ronald ; Pastalan, John ; Rittenhouse, Gee ; Wong, Yiu-Huen
Author_Institution :
Portland Technol. Dev. Group, Intel Corp., Hillsboro, OR, USA
Abstract :
Piezoelectric thin film AlN has great potential for on-chip devices such as thin-film resonator (TFR)-based bandpass filters. The AlN electromechanical coupling constant, K/sup 2/, is an important material parameter that determines the maximum possible bandwidth for bandpass filters. Using a previously published extraction technique, the bulk c-axis electromechanical coupling constant was measured as a function of the AlN X-ray diffraction rocking curve [full width at half maximum (FWHM)]. For FWHM values of less than approximately 4/spl deg/, K/sup 2/ saturates at approximately 6.5%, equivalent to the value for epitaxial AlN. For FWHM values >4/spl deg/, K/sup 2/ gradually decreases to approximately 2.5% at a FWHM of 7.5/spl deg/. These results indicate that the maximum possible bandwidth for TFR-based bandpass filters using polycrystalline AlN is approximately 80 MHz and that, for 60-MHz bandwidth PCS applications, an AlN film quality of >5.5/spl deg/ FWHM is required.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; band-pass filters; crystal filters; crystal resonators; electromechanical effects; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; wide band gap semiconductors; 80 MHz; AlN; AlN electromechanical coupling constant; AlN film quality; FWHM; TFR-based bandpass filters; X-ray diffraction rocking curve; bandpass filters; bandwidth; bulk c-axis electromechanical coupling constant; piezoelectric thin film; thin-film resonator-based bandpass filters; Band pass filters; Bandwidth; Biomembranes; Impedance; Laboratories; Personal communication networks; Radio frequency; Resonance; Thin film devices; X-ray diffraction;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on