Toward ultralow-power computing at exteme with silicon carbide (SiC) nanoelectromechanical logic

Growing number of important application areas, including automotive and industrial applications as well as space, avionics, combustion engine, intelligent propulsion systems, and geo-thermal exploration require electronics that can work reliable at extreme conditions - in particular at a temperature > 250°C and at high radiation (1-30 Mrad), where conventional electronics fail to work reliably. Traditionally, existing wideband-gap semiconductors, e.g., silicon carbide (SiC) transistor-based electronics have been considered most viable for high temperature and high radiation applications. However, the large-size, high threshold voltage, low switching speed and high leakage current make logic design with these devices unattractive. Additionally, the leakage current markedly increases at high temperature (in the range of 10 μA for a 2-input NAND gate), which induces self-heating effect and makes power delivery at high temperature very challenging. To address these issues, in this paper we present a computing platform for low-power reliable operation at extreme environment using SiC electromechanical switches. We show that a device-circuit-architecture co-design approach can provide reliable long-term operation with virtually zero leakage power.