Title :
High-speed 1.55 μm GaInAsP/InP DFB laser with simple mesa structure
Author :
Matsumoto, Kaname ; Kinoshita, J. ; Suhara, H. ; Tanaka, A. ; Shiraishi, Kotaro ; Morinaga, M.
Author_Institution :
Toshiba Electron Device Eng. Lab., Yokohama
fDate :
1/21/1988 12:00:00 AM
Abstract :
A new mesa structure has been developed for high-speed 1.55 μm GaInAsP/InP DFB lasers. This structure was easily fabricated using Ar ion beam etching on broad-area-contacted BH wafers. Laser parasitics were reduced by making the carrier concentration of the n-InP burying layer as low as 5×1016 cm-3. A 3 dB bandwidth of 7 GHz was achieved
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; semiconductor technology; sputter etching; 1.55 micron; 7 GHz; Ar ion beam etching; DFB lasers; GaInAsP-InP laser; broad-area-contacted BH wafers; carrier concentration; laser parasitics reduction; mesa structure; semiconductors;
Journal_Title :
Electronics Letters
