A small-signal MOSFET model for radio frequency IC applications

Author

Abou-Allam, Eyad ; Manku, Tajinder

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

16

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

437

Lastpage

447

Abstract

In this paper, we present a small-signal model for an integrated MOS transistor which takes into account the distributed nature of the gate structure. The y parameters are derived, as well as an equation for an equivalent current noise source at the output. The equivalent current noise source takes into account the thermal noise generated by the resistive gate. The modeling equations are of relatively simple form, allowing for easy implementation into a circuit simulation CAD tool. The model is particularly useful in the design of RF integrated circuits. The proposed model is verified using results obtained from HSPICE

Keywords

MOSFET; integrated circuit modelling; semiconductor device models; semiconductor device noise; thermal noise; MOSFET; circuit simulation CAD tool; distributed gate; equivalent current noise source; radio frequency IC; small-signal model; thermal noise; y parameters; Application specific integrated circuits; Circuit simulation; Equations; Integrated circuit modeling; Integrated circuit noise; MOSFET circuits; Noise generators; Radio frequency; Radiofrequency integrated circuits; Thermal resistance;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.631207

Filename

631207