Title :
Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBTs
Author :
Wei, Ce-Jun ; Hwang, James C M ; Ho, Wu-Jing ; HigginS, J. Aiden
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
A large-signal heterojunction bipolar transistor (HBT) model has been developed which includes self-heating, collector transit-time, and RF-breakdown effects. The model has a compact form which is based on a compromise between accuracy and utility. As such, the model can be readily extracted and verified with the aid of RF waveform measurements. Using the model in simulations, it was found that RF breakdown was dependent on base biasing and loading conditions. Therefore, with proper circuit design, the maximum output power of the HBT can significantly exceed the limit of open-base breakdown voltage
Keywords :
electric breakdown; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; RF waveform measurements; RF-breakdown effects; base biasing; collector transit-time; heterojunction bipolar transistor; large-signal modeling; loading conditions; maximum output power; microwave bipolar transistors; power HBT; self-heating; Circuit simulation; Circuit synthesis; Diodes; Electric breakdown; Heterojunction bipolar transistors; Power generation; Radio frequency; Thermal factors; Thermal resistance; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
