DocumentCode :
1293061
Title :
Low Reset Current in Stacked 
Resistive Switching Memory
Author :
Song, Y.L. ; Liu, Yanbing ; Wang, Y.L. ; Wang, Michael ; Tian, X.P. ; Yang, L.M. ; Lin, Y.Y.
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Volume :
32
Issue :
10
fYear :
2011
Firstpage :
1439
Lastpage :
1441
Abstract :
The complex impedance spectroscopy method associated with capacitance-voltage is employed to investigate the resistive switching behavior of the bilayer structure for the first time. The reset current is reduced by more than one order for the AlOx/WOx bilayer compared with that of the single-layer structure. It is distinguished that each layer plays an important role. The AlOx layer is the dominating switching layer, while the WOx layer has the functions of controlling the conductive filaments in the AlOx layer and acting as a series impedance to reduce the reset current.
Keywords :
capacitance; electrical resistivity; random-access storage; semiconductor storage; AlOx-WOx; bilayer structure; capacitance-voltage; complex impedance spectroscopy; conductive filament; reset current; resistive switching memory; single-layer structure; switching layer; Capacitance; Electrodes; Impedance; Metals; Resistance; Switches; System-on-a-chip; $hbox{AlO}_{x}/hbox{WO}_{x}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2162055
Filename :
5978177
Link To Document :
