Title :
Heterojunction InP/GaInAs phototransistors/bipolar transistors grown by MOVPE
Author :
Chandrasekhar, S. ; Campbell, Joe C. ; Dentai, A.G. ; Joyner, Charles H. ; Qua, G.J.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
fDate :
3/17/1988 12:00:00 AM
Abstract :
Heterojunction InP/GaInAs phototransistors with base terminals have been fabricated by atmospheric pressure metal organic vapour phase epitaxy. When operated as bipolar transistors, the devices exhibit high current gain (>1600) and good junction ideality factors (1.06 for the base/emitter and 1.25 for the base/collector junction). When operated as phototransistors, the devices have large optical gain (>800) at an incident power of 1 μW, at a wavelength of 1.3 μm
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; phototransistors; semiconductor epitaxial layers; vapour phase epitaxial growth; 1 muW; 1.3 micron; InP-GaInAs; atmospheric pressure metal organic vapour phase epitaxy; base terminals; base/collector junction; base/emitter; bipolar transistors; good junction ideality factors; high current gain; large optical gain;
Journal_Title :
Electronics Letters
