Title :
Short-channel AlGaN/GaN HEMTs with 70 nm T-gate
Author :
Breitschädel, O. ; Gräbeldinger, H. ; Kuhn, B. ; Scholz, F. ; Walthes, W. ; Berroth, M. ; Daumiller, I. ; Schad, K.-B. ; Kohn, E. ; Schweizer, H.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
fDate :
11/11/1999 12:00:00 AM
Abstract :
The authors have fabricated AlGaN-GaN HEMTs with gate-lengths down to 70 nm to investigate DC and high frequency characteristics and the breakdown behaviour, respectively. Comparisons with HEMTS fabricated on the same wafer but with a longer gate-length (2 μm) are presented as well. The 70 nm devices have a transconductance of ~155 mS/mm, fT is 43 GHz and fmax~100 GHz. The breakdown voltage reaches 27 V at ID=550 mA/mm
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; wide band gap semiconductors; 100 GHz; 155 mS/mm; 27 V; 43 GHz; 70 nm; AlGaN-GaN; DC characteristics; HF characteristics; T-gate; breakdown behaviour; high power transistors; microwave frequencies; nanometre-gate technology; power HEMT; short-channel HEMTs; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991387
