Title :
74 GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs
Author :
Murata, K. ; Yamane, Y.
Author_Institution :
NTT Network Innovations Labs., Yokohama, Japan
fDate :
11/11/1999 12:00:00 AM
Abstract :
A 74 GHz dynamic frequency divider integrated circuit (IC) that uses 0.1 μm InAlAs/InGaAs/InP HEMTs is reported. A digital dynamic T-type flip-flop circuit was adopted to achieve a wide operating frequency range. The IC covers most of the V-band millimetre-wave frequency range, and is faster than any digital dynamic frequency divider reported to date
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; flip-flops; frequency dividers; gallium arsenide; indium compounds; 0.1 micron; 74 GHz; HEMT integrated circuit; InAlAs-InGaAs-InP; V-band; digital dynamic T-type flip-flop; dynamic frequency divider; millimetre-wave frequency range; operating frequency range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991382
