• DocumentCode
    1293543
  • Title

    74 GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs

  • Author

    Murata, K. ; Yamane, Y.

  • Author_Institution
    NTT Network Innovations Labs., Yokohama, Japan
  • Volume
    35
  • Issue
    23
  • fYear
    1999
  • fDate
    11/11/1999 12:00:00 AM
  • Firstpage
    2024
  • Lastpage
    2025
  • Abstract
    A 74 GHz dynamic frequency divider integrated circuit (IC) that uses 0.1 μm InAlAs/InGaAs/InP HEMTs is reported. A digital dynamic T-type flip-flop circuit was adopted to achieve a wide operating frequency range. The IC covers most of the V-band millimetre-wave frequency range, and is faster than any digital dynamic frequency divider reported to date
  • Keywords
    HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; flip-flops; frequency dividers; gallium arsenide; indium compounds; 0.1 micron; 74 GHz; HEMT integrated circuit; InAlAs-InGaAs-InP; V-band; digital dynamic T-type flip-flop; dynamic frequency divider; millimetre-wave frequency range; operating frequency range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991382
  • Filename
    819036