Title :
Comparison of performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers
Author :
Wilson, L.R. ; Keightley, P.T. ; Cockburn, J.W. ; Skolnick, M.S. ; Clark, J.C. ; Hill, G. ; Grey, R. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Sheffield Univ., UK
fDate :
11/11/1999 12:00:00 AM
Abstract :
The authors present the lasing characteristics of a dry etched GaAs-AlGaAs quantum cascade laser (λ=9.5 μm) and compare its temperature performance with that of a similar InGaAs-AlGas laser (λ=8.3 μm). In pulsed operation, the maximum peak power measured for the GaAs-AlGaAs device is 400 mW at 10K and lasing is observed up to 190 K. The threshold current density (Jth) measured for this sample increases rapidly above 120 K, in contrast to the InGaAs-AlInAs laser, which exhibits a gradual increase of Jth up to 270 K. Temperature-dependent studies of a slightly modified GaAs-AlGaAs laser, in which the confinement of the upper laser level is increased, indicate that this aspect of the design does not limit the high temperature performance
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 10 K; 120 K; 400 mW; 8.3 mum; 9.5 mum; GaAs-AlGaAs; GaAs-AlGaAs quantum cascade lasers; InGaAs-AlGas laser; InGaAs-AlInAs; InGaAs-AlInAs quantum cascade lasers; dry etched; high temperature performance; lasing characteristics; maximum peak power; pulsed operation; temperature performance; temperature-dependent studies; threshold current density; upper laser level;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991380
