Title :
InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C
Author :
Kamp, M. ; Schmitt, M. ; Hofmann, J. ; Schafer, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
fDate :
11/11/1999 12:00:00 AM
Abstract :
The authors have investigated complex coupled distributed feedback lasers based on a single layer of InGaAs-AlGaAs self-organised quantum dots grown by molecular beam epitaxy. Metal gratings patterned laterally in a ridge waveguide laser provide feedback for singlemode operation. Threshold currents of 14 mA, differential efficiencies of 0.33 W/A and sidemode suppression ratios of >50 dS have been obtained. Monomode operation was observed for temperatures from 20 to 213°C
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; self-adjusting systems; semiconductor quantum dots; waveguide lasers; 20 to 213 C; 213 C; InGaAs-AlGaAs; InGaAs-AlGaAs self-organised quantum dots; InGaAs/AlGaAs quantum dot DFB lasers; complex coupled distributed feedback lasers; differential efficiencies; metal gratings; molecular beam epitaxy; monomode operation; ridge waveguide laser; sidemode suppression ratios; single layer; singlemode operation; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991352
