Title :
Analysis of the influence of MOS device geometry on predicted SEU cross sections
Author :
Warren, Kevin ; Massengill, Lloyd ; Schrimpf, Ron ; Barnaby, Hugh
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
An investigation into the single-event sensitive area geometry of a body-tied-to-source (BTS) SOI nMOS transistor has been performed through a novel simulation technique. Results are presented which demonstrate the influence of spatial variations in charge collection efficiency on the shape of the predicted upset cross section curve. Observations are made on a technique for inferring sensitive area or intra-cell collection efficiencies from cross section data.
Keywords :
MOSFET; ion beam effects; semiconductor device models; silicon-on-insulator; MOS device geometry; SEU cross sections; SOI nMOS transistor; body-tied-to-source device; charge collection efficiency; intra-cell collection efficiencies; simulation technique; single-event sensitive area geometry; spatial variations; upset cross section curve; Circuit simulation; Computational geometry; Computational modeling; MOS devices; MOSFETs; Predictive models; Shape; Silicon on insulator technology; Single event upset; Solid modeling;
Journal_Title :
Nuclear Science, IEEE Transactions on
