• DocumentCode
    1293763
  • Title

    Use of new ENDF/B-VI proton and neutron cross sections for single event upset calculations

  • Author

    Chadwick, M.B. ; Normand, E.

  • Author_Institution
    Div. of Theor., Los Alamos Nat. Lab., NM, USA
  • Volume
    46
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1386
  • Lastpage
    1394
  • Abstract
    Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data for incident protons and neutrons with energies up to 150 MeV. This paper focusses on the nuclear reaction physics that is important for calculating recoil spectra, and burst generation rate spectra. Comparisons are made with previous results, obtained from intranuclear cascade calculations as well as from previous ENDF data below 20 MeV, to demonstrate new features in the present calculations. Calculated SEU cross sections are compared with measured data.
  • Keywords
    neutron effects; proton effects; 20 to 150 MeV; ENDF/B-VI cross-section; SEU; burst generation rate spectra; neutron irradiation; nuclear reaction; proton irradiation; recoil spectra; silicon microelectronics; single event upset; Laboratories; Libraries; Microelectronics; Military aircraft; Neutrons; Nuclear power generation; Optical scattering; Protons; Silicon; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.819097
  • Filename
    819097