DocumentCode
1293763
Title
Use of new ENDF/B-VI proton and neutron cross sections for single event upset calculations
Author
Chadwick, M.B. ; Normand, E.
Author_Institution
Div. of Theor., Los Alamos Nat. Lab., NM, USA
Volume
46
Issue
6
fYear
1999
Firstpage
1386
Lastpage
1394
Abstract
Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data for incident protons and neutrons with energies up to 150 MeV. This paper focusses on the nuclear reaction physics that is important for calculating recoil spectra, and burst generation rate spectra. Comparisons are made with previous results, obtained from intranuclear cascade calculations as well as from previous ENDF data below 20 MeV, to demonstrate new features in the present calculations. Calculated SEU cross sections are compared with measured data.
Keywords
neutron effects; proton effects; 20 to 150 MeV; ENDF/B-VI cross-section; SEU; burst generation rate spectra; neutron irradiation; nuclear reaction; proton irradiation; recoil spectra; silicon microelectronics; single event upset; Laboratories; Libraries; Microelectronics; Military aircraft; Neutrons; Nuclear power generation; Optical scattering; Protons; Silicon; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.819097
Filename
819097
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