Title :
Use of new ENDF/B-VI proton and neutron cross sections for single event upset calculations
Author :
Chadwick, M.B. ; Normand, E.
Author_Institution :
Div. of Theor., Los Alamos Nat. Lab., NM, USA
Abstract :
Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data for incident protons and neutrons with energies up to 150 MeV. This paper focusses on the nuclear reaction physics that is important for calculating recoil spectra, and burst generation rate spectra. Comparisons are made with previous results, obtained from intranuclear cascade calculations as well as from previous ENDF data below 20 MeV, to demonstrate new features in the present calculations. Calculated SEU cross sections are compared with measured data.
Keywords :
neutron effects; proton effects; 20 to 150 MeV; ENDF/B-VI cross-section; SEU; burst generation rate spectra; neutron irradiation; nuclear reaction; proton irradiation; recoil spectra; silicon microelectronics; single event upset; Laboratories; Libraries; Microelectronics; Military aircraft; Neutrons; Nuclear power generation; Optical scattering; Protons; Silicon; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on