• DocumentCode
    1293768
  • Title

    Single event burnout sensitivity of embedded field effect transistors

  • Author

    Koga, R. ; Crain, S.H. ; Crawford, K.B. ; Yu, P. ; Gordon, M.J.

  • Author_Institution
    Aerosp. Corp., El Segundo, CA, USA
  • Volume
    46
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1395
  • Lastpage
    1402
  • Abstract
    Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.
  • Keywords
    ion beam effects; power MOSFET; pulse width modulation; HEXFET; embedded field effect transistor; heavy ion irradiation; high frequency device; power MOSFET; pulse width modulation; single event burnout; BiCMOS integrated circuits; Clocks; FETs; MOSFETs; Pulse circuits; Pulse width modulation; Single event upset; Space vector pulse width modulation; User-generated content; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.819098
  • Filename
    819098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1293768