Title :
Resonant tunnelling in Ga0.47In0.53As/InP double-barrier structures grown by AP-MOCVD
Author :
Higgs, A.W. ; Taylor, L.L. ; Apsley, N.
Author_Institution :
R. Signals & Radar Establ., Great Malvern
fDate :
3/17/1988 12:00:00 AM
Abstract :
Reports the first observation of negative-differential resistance in Ga0.47In0.53As/InP double-barrier structures grown by AP-MOCVD. The devices exhibit the largest peak/valley current ratios seen in this system; 1.2:1 (2.8:1) and 3.0:1 (5.5:1) at 77 K (4.2 K) for the n=1 and n=2 resonances respectively
Keywords :
chemical vapour deposition; gallium arsenide; indium compounds; negative resistance; semiconductor junctions; tunnelling; 4.2 K; 77 K; AP-MOCVD; double-barrier structures; negative-differential resistance; peak/valley current ratios; resonant tunnelling;
Journal_Title :
Electronics Letters
