• DocumentCode
    1293777
  • Title

    Resonant tunnelling in Ga0.47In0.53As/InP double-barrier structures grown by AP-MOCVD

  • Author

    Higgs, A.W. ; Taylor, L.L. ; Apsley, N.

  • Author_Institution
    R. Signals & Radar Establ., Great Malvern
  • Volume
    24
  • Issue
    6
  • fYear
    1988
  • fDate
    3/17/1988 12:00:00 AM
  • Firstpage
    322
  • Lastpage
    323
  • Abstract
    Reports the first observation of negative-differential resistance in Ga0.47In0.53As/InP double-barrier structures grown by AP-MOCVD. The devices exhibit the largest peak/valley current ratios seen in this system; 1.2:1 (2.8:1) and 3.0:1 (5.5:1) at 77 K (4.2 K) for the n=1 and n=2 resonances respectively
  • Keywords
    chemical vapour deposition; gallium arsenide; indium compounds; negative resistance; semiconductor junctions; tunnelling; 4.2 K; 77 K; AP-MOCVD; double-barrier structures; negative-differential resistance; peak/valley current ratios; resonant tunnelling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1293777