Title :
BN/Graphene/BN Transistors for RF Applications
Author :
Wang, Han ; Taychatanapat, Thiti ; Hsu, Allen ; Watanabe, Kenji ; Taniguchi, Takashi ; Jarillo-Herrero, Pablo ; Palacios, Tomas
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.
Keywords :
field effect transistors; graphene; RF applications; field-effect transistor; gate dielectric; high carrier velocity; high-frequency graphene RF electronics; substrate; transistors; Aluminum oxide; Dielectrics; FETs; Logic gates; Radio frequency; Substrates; Graphene field-effect transistors (GFETs); hexagonal boron nitride (hBN); radio frequency (RF);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2160611
