Title :
Single event upset immunity of strontium bismuth tantalate ferroelectric memories
Author :
Benedetto, J.M. ; Derbenwick, G.F. ; Cuchiaro, J.D.
Author_Institution :
UTMC Microelectron. Syst., Colorado Springs, CO, USA
Abstract :
An embedded 1 Kbit nonvolatile (NV) serial memory manufactured with strontium bismuth tantalate (SBT) ferroelectric (FE) technology was shown to be immune to effects of heavy ion irradiation. The memories did not lose any data in the non-volatile mode when exposed to xenon (maximum effective LET of 128 MeV-cm/sup 2//mg and a total fluence of 1.5/spl times/10/sup 7/ ions/cm/sup 2/). The ferroelectric memories also did not exhibit any loss in the ability to rewrite new data into the memory bits, indicating that no significant degradation of the FE dipoles occurred as a result of the heavy ion exposure. The fast read/write times of FE memories also means that single event gate rupture is unlikely to occur in this technology.
Keywords :
bismuth compounds; ferroelectric storage; ferroelectric thin films; ion beam effects; space vehicle electronics; strontium compounds; 1 Kbit; FE dipoles; SrBi/sub 2/Ta/sub 2/O/sub 9/; ferroelectric memories; ion exposures; maximum effective LET; nonvolatile serial memory; read/write times; single event gate rupture; single event upset immunity; total fluence; Bismuth; Degradation; Ferroelectric materials; Iron; Manufacturing; Nonvolatile memory; Read-write memory; Single event upset; Strontium; Xenon;
Journal_Title :
Nuclear Science, IEEE Transactions on
