Single event upset immunity of strontium bismuth tantalate ferroelectric memories

Author

Benedetto, J.M. ; Derbenwick, G.F. ; Cuchiaro, J.D.

Author_Institution

UTMC Microelectron. Syst., Colorado Springs, CO, USA

Volume

46

Issue

6

fYear

1999

Firstpage

1421

Lastpage

1426

Abstract

An embedded 1 Kbit nonvolatile (NV) serial memory manufactured with strontium bismuth tantalate (SBT) ferroelectric (FE) technology was shown to be immune to effects of heavy ion irradiation. The memories did not lose any data in the non-volatile mode when exposed to xenon (maximum effective LET of 128 MeV-cm/sup 2//mg and a total fluence of 1.5/spl times/10/sup 7/ ions/cm/sup 2/). The ferroelectric memories also did not exhibit any loss in the ability to rewrite new data into the memory bits, indicating that no significant degradation of the FE dipoles occurred as a result of the heavy ion exposure. The fast read/write times of FE memories also means that single event gate rupture is unlikely to occur in this technology.

Keywords

bismuth compounds; ferroelectric storage; ferroelectric thin films; ion beam effects; space vehicle electronics; strontium compounds; 1 Kbit; FE dipoles; SrBi/sub 2/Ta/sub 2/O/sub 9/; ferroelectric memories; ion exposures; maximum effective LET; nonvolatile serial memory; read/write times; single event gate rupture; single event upset immunity; total fluence; Bismuth; Degradation; Ferroelectric materials; Iron; Manufacturing; Nonvolatile memory; Read-write memory; Single event upset; Strontium; Xenon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819102

Filename

819102