Title :
Proton mobility in a-SiO/sub 2/
Author :
Kurtz, Henry A. ; Karna, Shashi P.
Author_Institution :
Dept. of Chem., Memphis State Univ., TN, USA
Abstract :
A model for proton mobility in a-SiO/sub 2/ is developed. Theoretical first-principles calculations are performed to test this model by obtaining pathways and activation energies for proton motion.
Keywords :
amorphous state; hopping conduction; ionic conductivity; silicon compounds; SiO/sub 2/; activation energies; amorphous state; first-principles calculations; proton hopping; proton mobility; tunnelling; Annealing; Chemistry; Nonvolatile memory; Performance evaluation; Physics; Protons; Quantum mechanics; Surges; Testing; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
