DocumentCode
1293954
Title
Hardness assurance implications of bimodal total dose response in a bipolar linear voltage comparator
Author
Krieg, J. ; Turflinger, T. ; Titus, J. ; Cole, P. ; Baker, P. ; Gehlhausen, M. ; Emily, D. ; Yang, L. ; Pease, R.L. ; Barnaby, H. ; Schrimpf, R. ; Maher, M.C.
Author_Institution
Naval Surface Warfare Center, Crane, IN, USA
Volume
46
Issue
6
fYear
1999
Firstpage
1627
Lastpage
1632
Abstract
The total dose response of transistors and circuits from a single wafer lot has been measured for high and low dose rate and elevated temperature irradiations. A bimodal irradiation response is observed in the circuit response that is shown to be a result of the input transistors. Hardness assurance sampling plans are examined for their adequacy to deal with the bimodal response distributions.
Keywords
bipolar transistor circuits; comparators (circuits); radiation hardening (electronics); bimodal distribution; bipolar linear voltage comparator; elevated temperature irradiation; radiation hardness assurance; total dose response; transistor circuit; Circuit testing; Cranes; Databases; Linear circuits; NASA; Performance evaluation; Radiation effects; Sampling methods; Temperature; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.819131
Filename
819131
Link To Document