Title :
InAlAs/InGaAs Interband Tunnel Diodes for SRAM
Author :
Sutar, Surajit ; Zhang, Qin ; Seabaugh, Alan
Author_Institution :
Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
Abstract :
The dependence of doping and alloy composition in InGaAs/InAlAs double-quantum-well resonant interband tunnel diodes (TDs) for static random access memory (SRAM) applications is explored. The peak current density is shown to vary by 5 orders of magnitude as the effective doping density is varied by a factor of 5. The reasons for this dependence are determined by characterization and analysis of current-voltage-temperature and capacitance-voltage measurements. This paper demonstrates a low-current bistable TD pair for SRAM with peak current density of 4 nA/μm2, peak-to-valley current ratio of 14, and peak voltage of 0.05 V enabling static binary storage at a supply voltage as low as 0.25 V.
Keywords :
SRAM chips; semiconductor doping; tunnel diodes; InAlAs-InGaAs; SRAM; alloy composition; capacitance-voltage measurement; current-voltage-temperature; doping density; double quantum well resonant interband tunnel diode; peak current density; static random access memory; voltage 0.05 V; Capacitance; Capacitance measurement; Current density; Current measurement; Diodes; Doping; Indium compounds; Indium gallium arsenide; Photonic band gap; Random access memory; Resonance; SRAM chips; Tunneling; Interband tunneling; PVCR; PVR; resonant interband tunnel diode (RITD); static random access memory (SRAM); tunnel SRAM; tunnel diode (TD); tunneling-based SRAM (TSRAM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2059611
