• DocumentCode
    1294042
  • Title

    The effects of architecture and process on the hardness of programmable technologies

  • Author

    Katz, R. ; Wang, J.J. ; Reed, R. ; Kleyner, I. ; d´Ordine, M. ; McCollum, J. ; Cronquist, B. ; Howard, J.

  • Author_Institution
    NASA Goddard Space Flight Center, Greenbelt, MD, USA
  • Volume
    46
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1736
  • Lastpage
    1743
  • Abstract
    Architecture and process, combined, significantly affect the hardness of programmable technologies. The effects of high energy ions, ferroelectric memory architectures, and shallow trench isolation are investigated. A detailed single event latchup (SEL) study has been performed.
  • Keywords
    ferroelectric storage; integrated circuit reliability; ion beam effects; isolation technology; memory architecture; radiation hardening (electronics); random-access storage; architecture; ferroelectric memory architectures; hardness; high energy ions; programmable technologies; shallow trench isolation; single event latchup; Aerospace engineering; EPROM; Ferroelectric films; Ferroelectric materials; Field programmable gate arrays; Isolation technology; Memory architecture; Nonvolatile memory; Random access memory; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.819147
  • Filename
    819147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1294042