Title :
The effects of architecture and process on the hardness of programmable technologies
Author :
Katz, R. ; Wang, J.J. ; Reed, R. ; Kleyner, I. ; d´Ordine, M. ; McCollum, J. ; Cronquist, B. ; Howard, J.
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
Architecture and process, combined, significantly affect the hardness of programmable technologies. The effects of high energy ions, ferroelectric memory architectures, and shallow trench isolation are investigated. A detailed single event latchup (SEL) study has been performed.
Keywords :
ferroelectric storage; integrated circuit reliability; ion beam effects; isolation technology; memory architecture; radiation hardening (electronics); random-access storage; architecture; ferroelectric memory architectures; hardness; high energy ions; programmable technologies; shallow trench isolation; single event latchup; Aerospace engineering; EPROM; Ferroelectric films; Ferroelectric materials; Field programmable gate arrays; Isolation technology; Memory architecture; Nonvolatile memory; Random access memory; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
