Title :
Radiation effects on advanced flash memories
Author :
Nguyen, D.N. ; Guertin, S.M. ; Swift, G.M. ; Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Radiation tests of advanced flash memories including, multi-level flash technology, are compared with results from previous generations. Total dose failure levels are comparable to or lower than those of older technologies, but are likely still caused by degradation of the internal charge pump. Small numbers of read errors were observed during single event tests of the multi-level devices that appear to be caused by shifts in the sense amplifier detection levels or cell threshold shifts rather than loss of electrons off the floating gate.
Keywords :
failure analysis; flash memories; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); advanced flash memories; cell threshold shifts; degradation; floating gate; internal charge pump; multi-level devices; multi-level flash technology; radiation effects; radiation tests; read errors; sense amplifier detection levels; single event tests; total dose failure levels; Charge pumps; Circuits; Flash memory; Laboratories; Propulsion; Radiation effects; Testing; Tunneling; Voltage; Writing;
Journal_Title :
Nuclear Science, IEEE Transactions on
