Title :
Measurements of dose with individual FAMOS transistors
Author :
Scheick, L.Z. ; McNulty, P.J. ; Roth, D.R. ; Davis, M.G. ; Mason, B.E.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
Abstract :
A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of ultraviolet light (UV) exposure required to erase each cell of a commercial UltraViolet erasable Programmable Read Only Memory (UVPROM) correlates with the dose absorbed by the floating gate of that transistor. This technique facilitates analysis of the microdose distribution across the array and the occurrence of Single Event Upsets (SEU) like anomalous shifts due to rare large energy-deposition events.
Keywords :
EPROM; MOS memory circuits; integrated circuit measurement; radiation effects; space vehicle electronics; FAMOS transistors; SEU; UVPROM; anomalous shifts; energy-deposition events; floating gate; floating gate avalanche MOS; ionizing radiation; microdose distribution; ultraviolet light exposure; Astronomy; Charge carrier processes; Extraterrestrial measurements; FETs; Ionizing radiation; Nonvolatile memory; PROM; Physics; Single event upset; Switches;
Journal_Title :
Nuclear Science, IEEE Transactions on
