Title :
A system for radiation damage monitoring
Author :
Rosenfeld, A.B. ; Reinhard, M.I. ; Marinaro, D. ; Ihnat, P. ; Taylor, G. ; Pea, L. ; Freeman, N. ; Alexiev, D. ; Lerch, M.
Author_Institution :
Radiat. Phys. Group, Wollongong Univ., NSW, Australia
Abstract :
An automatic radiation damage monitoring system has been developed and tested. The system is based on two passive sensors for the measurement of integral ionizing and non-ionizing energy losses in silicon devices. Ionizing dose is measured in terms of dose in SiO/sub 2/ and displacement damage in terms of 1 MeV(Si) equivalent neutron fluence. The system uses MOSFETs and PIN dosimetric diodes.
Keywords :
MOSFET; elemental semiconductors; p-i-n diodes; radiation effects; semiconductor device testing; silicon; MOSFETs; PIN dosimetric diodes; Si; displacement damage; equivalent neutron fluence; ionizing dose; ionizing energy losses; nonionizing energy losses; passive sensors; radiation damage monitoring; Automatic testing; Computerized monitoring; Energy loss; Energy measurement; Ionizing radiation sensors; Loss measurement; Radiation monitoring; Sensor systems; Silicon devices; System testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
