MOSFET dosimetry of an X-ray microbeam

Author

Rosenfeld, A.B. ; Kaplan, G.I. ; Kron, T. ; Allen, B.J. ; Dilmanian, A. ; Orion, I. ; Ren, B. ; Lerch, M.L.F. ; Holmes-Siedle, A.

Author_Institution

Radiat. Phys. Group, Wollongong Univ., NSW, Australia

Volume

46

Issue

6

fYear

1999

Firstpage

1774

Lastpage

1780

Abstract

A metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a radiation monitor to map the profile of a variety of X-ray radiation microbeams. The present work studies the role of the topology of the MOSFET gate oxide when mapping radiation microbeams. The "edge-on" MOSFET has been introduced for microbeam mapping and the spatial resolution of the "edge-on" MOSFET is investigated. Comparison is made with other mapping techniques including, Gafchromic/sup TM/ film, radiographic film, ionization chamber. The results clearly demonstrate the superiority of the "edge-on" MOSFET when applied to mapping of narrow radiation beams. The spatial resolution of the "edge-on" MOSFET is estimated to be 1 /spl mu/m and appears to be limited by the width of the gate oxide thickness.

Keywords

MOSFET; X-ray detection; dosimetry; radiation monitoring; MOSFET dosimetry; X-ray microbeam; edge-on gate oxide; mapping technique; radiation monitor; spatial resolution; Dosimetry; FETs; Ionization chambers; Laboratories; MOSFET circuits; Physics; Radiation monitoring; Spatial resolution; Synchrotron radiation; Topology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819153

Filename

819153