Title :
Light emission studies of total dose and hot carrier effects on silicon junctions
Author :
Kerns, S. ; Jiang, D. ; de la Bardonnie, M. ; Pelanchon, F. ; Barnaby, H. ; Kerns, D.V., Jr. ; Schrimpf, R.D. ; Bhuva, B.L. ; Mialhe, P. ; Hoffmann, A. ; Charles, J.-P.
Author_Institution :
Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
The electrical characteristics of silicon light emitting devices are changed in similar ways by X-ray irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.
Keywords :
X-ray effects; boron; electroluminescence; elemental semiconductors; hot carriers; hydrogen; interface states; p-n junctions; passivation; silicon; Si junctions; Si:B; X-ray irradiation; electrical characteristics; hot carrier effects; hot carrier stresses; junction micro-environment formation; junction-localized B passivation; liberated hydrogen; light emission studies; light emitting devices; optical characterization; total dose effects; Annealing; Avalanche breakdown; Electric variables; Hot carrier effects; Hot carriers; Optical transmitters; P-n junctions; Silicon; Stimulated emission; Thermal stresses;
Journal_Title :
Nuclear Science, IEEE Transactions on
