A 5 nm nitrided gate oxide for 0.25 /spl mu/m SOI CMOS technologies

Author

Liu, S.T. ; Fechner, P. ; Balster, S. ; Dougal, G. ; Sinha, S. ; Chen, H. ; Shaw, G. ; Yue, J. ; Jenkins, W.C. ; Hughes, H.L.

Author_Institution

Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA

Volume

46

Issue

6

fYear

1999

Firstpage

1824

Lastpage

1829

Abstract

Hot carrier lifetime, gate oxide integrity, and radiation response of a 5 nm nitrided gate oxide were evaluated for 0.25 /spl mu/m SOI CMOS devices intended for use in 2.5 V applications and high radiation environments. The devices were fabricated in a new SOI substrate called UNIBOND-170. It is found that the DC hot electron lifetime of the devices exceed 10 years at the operating voltage. Good gate oxide integrity and radiation hardening up to 1 Mrad are shown to make this technology promising for radiation-hard ULSI applications.

Keywords

CMOS integrated circuits; ULSI; carrier lifetime; dielectric thin films; hot carriers; integrated circuit reliability; integrated circuit technology; radiation hardening (electronics); silicon-on-insulator; 0.25 micron; 1 Mrad; 10 year; 2.5 V; 5 nm; DC hot electron lifetime; SOI CMOS technologies; Si; UNIBOND-170 SOI substrate; gate oxide integrity; high radiation environments; hot carrier lifetime; nitrided gate oxide; radiation hardening; radiation response; radiation-hard ULSI applications; Boron; CMOS technology; Degradation; Dielectric devices; Dielectric substrates; Hot carriers; MOS devices; MOSFETs; Space technology; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819160

Filename

819160