Functional characteristics and radiation tolerance of AToM, the front-end chip of BaBar silicon vertex tracker

Author

Manfredi, P.F. ; Abbott, B. ; Clark, A. ; DeWitt, J. ; Dow, S. ; Eisner, A. ; Fan, Q. ; Frey, A. ; Johnson, R. ; Karcher, A. ; Kipnis, I. ; Kroeger, W. ; Leona, A. ; Levi, M. ; Mandelli, E. ; Luo, L. ; Morsani, F. ; Nyman, M. ; Perazzo, A. ; Pedrali-Noy,

Author_Institution

Dipt. di Elettronica, Pavia Univ., Italy

Volume

46

Issue

6

fYear

1999

Firstpage

1865

Lastpage

1870

Abstract

The readout chip designed to process the microstrip signals in the BaBar Silicon Vertex Tracker (SVT), after being realized twice in a radsoft technology has been transferred into the final radhard process. So far the circuit has gone through four different radhard submissions, one aiming at providing a preliminary insight into the characteristics of the radhard chip, the other ones constituting pre-production and production runs. Chips from these submissions have undergone a thorough set of tests addressing functional aspects, noise parameters and effects of radiation on signal and noise behavior. The present paper discusses the results of these tests and describes the final version of the circuit which has been proven to successfully meet the experiment requirements.

Keywords

mixed analogue-digital integrated circuits; nuclear electronics; position sensitive particle detectors; radiation hardening (electronics); readout electronics; semiconductor device noise; silicon radiation detectors; AToM; BaBar silicon vertex tracker; front-end chip; functional characteristics; microstrip signals; noise parameters; radhard process; radiation tolerance; readout chip; Atomic beams; Atomic measurements; CMOS technology; Circuit noise; Circuit testing; Detectors; Microstrip; Signal processing; Silicon; Strips;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819242

Filename

819242