Title :
Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors
Author :
Dorfan, D. ; Dubbs, T. ; Grillo, A.A. ; Ipe, N.E. ; Mao, S. ; Rowe, W. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Stromberg, S. ; Wichmann, R.
Author_Institution :
SCIPP, California Univ., Santa Cruz, CA, USA
Abstract :
We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest dose to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing high dose rate data is demonstrated.
Keywords :
annealing; bipolar transistors; colliding beam accelerators; dosimetry; gamma-ray effects; nuclear electronics; proton accelerators; synchrotrons; 200 krad; LHC; Large Hadron Collider; annealing; bipolar transistors; current gain; dose rate dependence; gamma dose rates; maximum dose; radiation induced damage; Annealing; Bipolar transistors; Circuits; Current measurement; Gain measurement; Large Hadron Collider; Linear accelerators; Radiation detectors; Silicon radiation detectors; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
