DocumentCode :
1294358
Title :
The wrong answers - [electronics nanoscale]
Author :
Edwards, Chris
Volume :
4
Issue :
11
fYear :
2009
Firstpage :
32
Lastpage :
35
Abstract :
\´Solid-state\´ and \´no moving parts\´. They are the phrases manufacturers use to let us know that stuff is reliable. Researchers such as Professor Asen Asenov of the University of Glasgow know, however, that solids aren\´t all that solid. The core problem is variability. Experts speaking at the recent international conference on CMOS Variability in London, organised by the UK\´s National Microelectronics Initiative (NMI), see the 22 nm process as a critical juncture in the evolution of the silicon chip. Due to start production in 2012, the process will use transistors so small that Asenov claims: "You can count the dopant atoms. You can even count the number of silicon atoms in there. The random placement of dopant atoms in the channel of a transistor can lead to big changes in performance, even between two devices sitting within tens of nanometres of each other on a die, to the extent that one works and the other a failure. Size is not the only cause of variability.
Keywords :
CMOS integrated circuits; elemental semiconductors; nanoelectronics; silicon; transistors; CMOS; Razor; Si; Si chip scaling; nanoscale electronics; size 22 nm; solid-state devices; strained Si; transistor; variation-aware circuits;
fLanguage :
English
Journal_Title :
Engineering & Technology
Publisher :
iet
ISSN :
1750-9637
Type :
jour
Filename :
5198442
Link To Document :
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