Title :
Evaluation of radiation damaged p-in-n and n-in-n silicon microstrip detectors
Author :
Unno, Y. ; Yamashita, Takayoshi ; Terada, S. ; Kohriki, T. ; Moorhead, G. ; Iwata, Y. ; Takashima, R. ; Ikeda, M. ; Kitayama, E. ; Sato, K. ; Kondo, T. ; Ohsugi, T. ; Nakano, I. ; Fukunaga, C. ; Phillips, P.W. ; Robinson, D. ; Johansen, L.G. ; Riedler, P.
Author_Institution :
Inst. of Particle & Nucl. Studies, High Energy Accel. Res. Organ., Tsukuba, Japan
Abstract :
Two p-in-n and one n-in-n silicon microstrip detectors were radiation-damaged and tested in a beam. A comparison was made between the p-in-n and the n-in-n in high resistivity wafers, and the p-in-n in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-in-n and the p-in-n detectors, which suggested that the signals were shared between strips more in the irradiated p-in-n detectors. Although a difference of the low and the high resistivity wafers was observed in the body capacitance measurement, little difference was observed in the beam test results.
Keywords :
capacitance measurement; proton effects; silicon radiation detectors; capacitance measurement; charge collection; high resistivity wafer; low resistivity wafer; n-in-n Si microstrip detector; p-in-n Si microstrip detector; proton irradiation; radiation damage; Conductivity; Genetic mutations; Laboratories; Microstrip components; P-n junctions; Physics; Radiation detectors; Silicon radiation detectors; Strips; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
