DocumentCode
1294652
Title
ISFET based chemical gilbert cell
Author
Kalofonou, Melpomeni ; Toumazou, Christofer
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
Volume
47
Issue
16
fYear
2011
Firstpage
903
Lastpage
904
Abstract
An ion-sensitive field effect transistor (ISFET) based chemical Gilbert cell is presented, capable of differential measurement of pH signals during thermocycling reactions. The proposed circuit is capable of measuring the difference between two reaction chambers allowing stable drift reduction. Implemented in a typical 0.35 μm CMOS process, the resulting topology has a tunable gain of up to 40 dB, is temperature stable, with a variation of just 0.7% within the range of 0 to 100°C and achieves a low power consumption of 198 nW.
Keywords
CMOS integrated circuits; field effect transistors; low-power electronics; pH measurement; CMOS; ISFET; chemical Gilbert cell; differential measurement; gain 40 dB; ion-sensitive field effect transistor; low power consumption; pH signals; power 198 nW; size 0.35 mum; temperature 100 C; thermocycling reactions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.1946
Filename
5980022
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