DocumentCode :
1294658
Title :
58-72 GHz CMOS wideband variable gain low-noise amplifier
Author :
Kim, Sungho ; Kim, Hyun-Chang ; Kim, Do-Hyeon ; Jeon, Sanggeun ; Kim, Marn-Go ; Rieh, Jae-Sung
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Volume :
47
Issue :
16
fYear :
2011
Firstpage :
904
Lastpage :
906
Abstract :
A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3 dB bandwidth of 14 GHz (58-72 GHz) is developed in a 65 nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8 dB with a 1 dB gain flatness of 10 GHz (60-70 GHz). With tuning voltage adjusted from 0.8 to 2.8 V, the gain and noise figure are varied from 21.8 to 12.8 dB and from 4.2 to 5.7 dB, respectively, at 64 GHz. Input P-1dB was measured to be -22.1 dBm. DC power consumption is 36 mW with VDD = 1.2 V and the chip size is 0.75 × 0.65 mm.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; CMOS wideband variable gain low-noise amplifier; DC power consumption; RFCMOS technology; V-band wideband variable gain low-noise amplifier; frequency 58 GHz to 72 GHz; gain control; noise figure; power 36 mW; size 65 nm; tuning voltage; voltage 1.2 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.1741
Filename :
5980023
Link To Document :
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