Title :
Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current
Author :
Xie, Fei ; Lu, Hai-Han ; Chen, Degang J. ; Han, P. ; Zhang, Rongting ; Zheng, You Dou ; Li, Luoqing ; Jiang, W.H. ; Chen, Ci
Author_Institution :
Jiangsu Provincial Key Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, China
Abstract :
Large-area metal-semiconductor-metal (MSM) solar-blind photodetectors with a device area of 5-5-mm2 have been fabricated on Al0.4Ga0.6N/AlN/sapphire epistructure. The photodetector exhibits ultra-low dark current density of 3.2×10-12 A/cm2 under 20 V bias and a corresponding breakdown voltage of up to 385 V. The solar-blind/ultraviolet rejection ratio of the photodetector is more than four orders of magnitude with a maximum quantum efficiency of 28 at 275 nm.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; photodetectors; wide band gap semiconductors; AlGaN-AlN; C; MSM photodetectors; efficiency 28 percent; large-area metal-semiconductor-metal solar-blind photodetectors; sapphire epistructure; solar-blind-ultraviolet rejection ratio; ultra-low dark current density; voltage 20 V; wavelength 275 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.1695
