Title :
Broad-band high-speed microwave power sensor using hot carriers in semiconductor
Author :
Kikuchi, Kazuo ; Oshimoto, Ainosuke
Author_Institution :
Dept. of Electrical Engng., Nat. Defense Acad., Kanagawa, Japan
Abstract :
The principal characteristics of a semiconductor power sensor based upon the temperature rise of hot carriers are investigated. A method of designing a broad-band coaxial mount is described. The hot-carrier power sensor is fabricated by a whisker contact to p-type germanium. A sensor using optimum resistivity results in a noise equivalent power of -58 dBm/Hz1/2 with a 60-dB dynamic range. A broad-band-matched mount, having an average VSWR of 1.1:1 was attained for the frequency range from 1 to 12 GHz.
Keywords :
elemental semiconductors; germanium; hot carriers; microwave detectors; microwave measurement; solid-state microwave devices; 1 to 12 GHz; VSWR; broad-band coaxial mount; broad-band-matched mount; high speed microwave power sensor; hot-carrier power sensor; noise equivalent power; p-Ge; semiconductor power sensor; whisker contact; Broadband communication; Conductivity; Dynamic range; Hot carriers; Microwave measurements; Noise; Temperature sensors;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1981.6312398
