Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

Author

Hossain, Nadir ; Sweeney, S.J. ; Rogowsky, S. ; Ostendorf, R. ; Wagner, Jens ; Liebich, S. ; Zimprich, M. ; Volz, K. ; Kunert, Bernardette ; Stolz, Wolfgang

Author_Institution

Adv. Technol. Inst. & Dept. of Phys., Univ. of Surrey, Guildford, UK

Volume

47

Issue

16

fYear

2011

Firstpage

931

Lastpage

933

Abstract

Recent significant improvements in Ga(NAsP)/GaP quantum well lasers grown by metal organic vapour phase epitaxy on a GaP substrate are reported. At room temperature, the devices show a threshold current density of 4.0 kAcm^-2 at a lasing wavelength of 981 nm for a cavity length of 1 mm and a characteristic temperature of 58 K in the temperature region of 220 - 295 K. These improvements further verify the possible application for the novel III/V Ga(NAsP)/GaP material system to integrate long-term stable laser diodes in a standard CMOS-compatible electronic chip.

Keywords

CMOS integrated circuits; III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; integrated optics; laser cavity resonators; laser stability; quantum well lasers; vapour phase epitaxial growth; Ga(NAsP)-GaP; GaP substrate; MOVPE; cavity length; dilute nitride; long-term stable laser diodes; metal organic vapour phase epitaxy; quantum well lasers; reduced threshold current; standard CMOS-compatible electronic chip; temperature 220 K to 296 K; temperature 293 K to 298 K; threshold current density; wavelength 981 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2011.1927

Filename

5980041