• DocumentCode
    1294797
  • Title

    Generalised Berglund relation in LDMOS transistors

  • Author

    Yao, Wei ; Gildenblat, Gennady ; McAndrew, Colin C. ; Cassagnes, A.

  • Author_Institution
    Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
  • Volume
    47
  • Issue
    16
  • fYear
    2011
  • Firstpage
    936
  • Lastpage
    937
  • Abstract
    Berglund related a certain area associated with the normalised MOS C(V) curve to the energy gap of silicon. Despite the fact that in LDMOS transistors the gate capacitance exhibits complicated behaviour associated with the presence of the drift region, it turns out that the Berglund relation remains valid, as confirmed by both measurements and simulations.
  • Keywords
    MOSFET; LDMOS transistors; Si; drift region; energy gap; gate capacitance; generalised Berglund relation; normalised MOS curve;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.1954
  • Filename
    5980044
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1294797