DocumentCode
1294935
Title
High-power AlGaInP three-ridge type laser diode array
Author
Valster, A. ; Andre, J.P. ; Dupont-Nivet, E. ; Martin, G.M.
Author_Institution
Philips Res. Labs., Eindhoven
Volume
24
Issue
6
fYear
1988
fDate
3/17/1988 12:00:00 AM
Firstpage
326
Lastpage
327
Abstract
A three ridge type GaInP/AlGaInP visible light emitting laser diode array grown by AP-OMVPE has been achieved. A pulsed maximum output power of 108 mW is obtained from this laser array without the use of facet coatings. The pulsed threshold current is 290 mA and the external differential efficiency is 0.75 W/A
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 108 mW; 290 mA; AP-OMVPE; GaInP-AlGaInP; external differential efficiency; facet coatings; pulsed maximum output power; pulsed threshold current; visible light emitting laser diode array;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8194
Link To Document