98-GHz InP/InGaAs HBT amplifier with 26-dB gain

Author

Morf, Thomas ; Hübscher, Sonja ; Huber, Dieter ; Huber, Alex ; Schwarz, Volker ; Jackel, Heinz

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

9

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

523

Lastpage

525

Abstract

In this work the design and characterization of an InP/InGaAs single heterojunction bipolar transistor (HBT) W-band amplifier is described. The amplifier achieves 26-dB gain at 98 GHz with a bandwidth of 3.1 GHz. On-wafer S-parameter and gain compression measurements are presented. The goal was to explore high gain HBT-amplifiers around 100 GHz. No comparable HBT amplifier at these frequencies could be found in the literature

Keywords

III-V semiconductors; S-parameters; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 26 dB; 3.1 GHz; 98 GHz; EHF; InP-InGaAs; InP/InGaAs HBT amplifier; W-band amplifier; characterization; gain compression measurements; heterojunction bipolar transistor; high gain HBT amplifiers; onwafer S-parameter measurements; Bandwidth; Broadband amplifiers; Extraterrestrial measurements; Frequency; Gain measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Resistors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.819419

Filename

819419