Title :
A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer
Author :
Yon-Lin Kok ; Huei Wang ; Barsky, M. ; Lai, R. ; Sholley, M. ; Allen, B.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
A 180-GHz monolithic sub-harmonic diode mixer is developed using 0.08-μm pseudomorphic InAlAs-InGaAs HEMT MMIC process on a 2-mil-thick InP substrate. This mixer demonstrates a conversion loss of better than 16.5 dB from 175 to 182 GHz with an LO drive of 13 dBm at 96 GHz. This is the first demonstration of a monolithic subharmonic HEMT diode mixer in this frequency range. The design and measurement of this monolithic microwave integrated circuit (MMIC) mixer and the waveguide-to-microstrip line transitions of the test-fixture are presented.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; indium compounds; integrated circuit design; integrated circuit measurement; millimetre wave mixers; 0.08 micron; 16.5 dB; 180 GHz; 96 to 182 GHz; EHF; InAlAs-InGaAs; InP; InP substrate; InP-based HEMT diode mixer; PHEMT MIMIC; conversion loss; monolithic subharmonic HEMT diode mixer; pseudomorphic HEMT MMIC process; test-fixture; waveguide-to-microstrip line transitions; Circuit testing; Diodes; Frequency; HEMTs; Indium phosphide; Integrated circuit measurements; MMICs; Microwave integrated circuits; Microwave measurements; Mixers;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
