• DocumentCode
    1295024
  • Title

    Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage

  • Author

    Jing Qi ; Qing Zhang ; Jian Huang ; Jingjian Ren ; Olmedo, M. ; Jianlin Liu

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
  • Volume
    32
  • Issue
    10
  • fYear
    2011
  • Firstpage
    1445
  • Lastpage
    1447
  • Abstract
    Write-once-read-many-times memory cells were fabricated using ZnO thin film on p-Si (111) substrate. The off- and on-state resistance ratio is over 104 and can be well sustained for more than 100 years and perfectly endure reading cycles of 108 . The conducting filaments consisting of oxygen vacancies are responsible for the switching mechanism.
  • Keywords
    digital storage; silicon; zinc compounds; Si; ZnO; ZnO thin film; long-time archival storage; p-Si (111) substrate; write-once-read-many-times memory; Grippers; Resistance; Semiconductor device measurement; Switches; Temperature measurement; Writing; Zinc oxide; Conducting mechanism; ZnO; write-once–read-many-times (WORM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2162219
  • Filename
    5981376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1295024