Title :
Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage
Author :
Jing Qi ; Qing Zhang ; Jian Huang ; Jingjian Ren ; Olmedo, M. ; Jianlin Liu
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Abstract :
Write-once-read-many-times memory cells were fabricated using ZnO thin film on p-Si (111) substrate. The off- and on-state resistance ratio is over 104 and can be well sustained for more than 100 years and perfectly endure reading cycles of 108 . The conducting filaments consisting of oxygen vacancies are responsible for the switching mechanism.
Keywords :
digital storage; silicon; zinc compounds; Si; ZnO; ZnO thin film; long-time archival storage; p-Si (111) substrate; write-once-read-many-times memory; Grippers; Resistance; Semiconductor device measurement; Switches; Temperature measurement; Writing; Zinc oxide; Conducting mechanism; ZnO; write-once–read-many-times (WORM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2162219
