Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off

Author

Basco, Ricardo ; Prabhu, Ajay ; Yngvesson, K. Sigfrid ; Lau, Kei May

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

44

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

11

Lastpage

16

Abstract

In this paper, we report the integration of an AlGaAs/GaAs two-dimensional electron gas (2-DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off (ELO) technique. The 1 μm thick high-mobility 2-DEG device transplanted on quartz showed no sign of degradation resulting from the ELO process. The 2-DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. We obtained a minimum intrinsic conversion loss of 17 dB at 94 GHz at liquid nitrogen temperature. The measured IF bandwidth of the mixer was greater than 3 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; integrated circuit technology; microstrip circuits; millimetre wave mixers; quartz; substrates; two-dimensional electron gas; 1 micron; 17 dB; 2DEG mixer; 3 GHz; 77 K; 94 GHz; AlGaAs-GaAs; EHF; ELO technique; IF bandwidth; MM-wave operation; SiO₂; bolometric mixer; epitaxial liftoff; fabrication procedure; high-mobility 2-DEG device; liquid nitrogen temperature; monolithic integration; quartz substrate; quartz-based microstrip circuit; two-dimensional electron gas; ungated MODFETs; Bandwidth; Degradation; Electrons; Fabrication; Gallium arsenide; Microstrip; Monolithic integrated circuits; Nitrogen; Substrates; Temperature measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.554785

Filename

554785