Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology

Author

Kraemer, Tomas ; Meliani, Chafik ; Schmueckle, Franz Josef ; Wuerfl, Joachim ; Traenkle, Guenther

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany

Volume

57

Issue

9

fYear

2009

Firstpage

2114

Lastpage

2121

Abstract

Promising transistor results of an InP transferred substrate (TS) technology are presented. f_t and f_max are reported as high as 420 and 450 GHz, respectively. Processing has been developed to a full monolithic microwave integrated circuit compatible technology with metal-insulator-metal capacitors, NiCr resistors, and a multilevel wiring scheme. As an example, traveling-wave amplifiers (TWAs) have been designed and realized in a microstrip environment. Simulations of the environment have been done, and are presented in this paper. They have then been used as a design kit to perform circuit simulations. The TWAs demonstrate a gain of 12.8 dB and a 3-dB cutoff frequency f_c of 70 GHz. To the authors´ knowledge, this is the highest proven bandwidth of a broadband amplifier in TS technology.

Keywords

III-V semiconductors; MIM devices; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; microstrip circuits; travelling wave amplifiers; wideband amplifiers; HBT technology; InP; broadband amplifier; circuit simulation; frequency 70 GHz; gain 12.8 dB; gain 3 dB; heterojunction bipolar transistor; metal-insulator-metal capacitor; microstrip environment; monolithic microwave integrated circuit compatible technology; multilevel wiring scheme; traveling-wave amplifier; Distributed amplifiers; InP heterojunction bipolar transistors (HBTs); integrated circuit modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2009.2027070

Filename

5200379