DocumentCode
1295367
Title
Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films
Author
Mehregany, Mehran ; Tong, Lijun ; Matus, Lawrence G. ; Larkin, David J.
Author_Institution
Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
Volume
44
Issue
1
fYear
1997
fDate
1/1/1997 12:00:00 AM
Firstpage
74
Lastpage
79
Abstract
Fabrication of epitaxial 3C-SiC microstructures by bulk micromachining of the underlying silicon substrate was investigated. Initial studies of the mechanical properties of epitaxial 3C-SiC films deposited on silicon were carried out on microstructures fabricated by bulk micromachining of the silicon substrate to evaluate the potential of these films for micromechanics. Residual stress and biaxial modulus of 3C-SiC films were measured by load-deflection measurements of suspended diaphragms. The film´s residual stress was tensile with an average of 212 MPa, while the in-plane biaxial modulus averaged 441 GPa
Keywords
elastic moduli; internal stresses; micromachining; micromechanical devices; semiconductor epitaxial layers; semiconductor materials; silicon compounds; SiC; biaxial modulus; bulk micromachining; elastic modulus; internal stress; load-deflection measurements; mechanical properties; micromechanics; residual stress; suspended diaphragms; Fabrication; Internal stresses; Mechanical factors; Micromachining; Microstructure; Residual stresses; Semiconductor films; Silicon; Stress measurement; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.554795
Filename
554795
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