• DocumentCode
    1295367
  • Title

    Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films

  • Author

    Mehregany, Mehran ; Tong, Lijun ; Matus, Lawrence G. ; Larkin, David J.

  • Author_Institution
    Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
  • Volume
    44
  • Issue
    1
  • fYear
    1997
  • fDate
    1/1/1997 12:00:00 AM
  • Firstpage
    74
  • Lastpage
    79
  • Abstract
    Fabrication of epitaxial 3C-SiC microstructures by bulk micromachining of the underlying silicon substrate was investigated. Initial studies of the mechanical properties of epitaxial 3C-SiC films deposited on silicon were carried out on microstructures fabricated by bulk micromachining of the silicon substrate to evaluate the potential of these films for micromechanics. Residual stress and biaxial modulus of 3C-SiC films were measured by load-deflection measurements of suspended diaphragms. The film´s residual stress was tensile with an average of 212 MPa, while the in-plane biaxial modulus averaged 441 GPa
  • Keywords
    elastic moduli; internal stresses; micromachining; micromechanical devices; semiconductor epitaxial layers; semiconductor materials; silicon compounds; SiC; biaxial modulus; bulk micromachining; elastic modulus; internal stress; load-deflection measurements; mechanical properties; micromechanics; residual stress; suspended diaphragms; Fabrication; Internal stresses; Mechanical factors; Micromachining; Microstructure; Residual stresses; Semiconductor films; Silicon; Stress measurement; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.554795
  • Filename
    554795