Title :
Subthreshold analysis of an MOS analog switch
Author :
Aghtar, Saeed ; Haslett, J.W. ; Trofimenkoff, F.N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada
fDate :
1/1/1997 12:00:00 AM
Abstract :
Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This analytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors
Keywords :
MOS analogue integrated circuits; SPICE; circuit analysis computing; integrated circuit modelling; switching circuits; MOS analog switch; SPICE simulation; charge injection error; nonquasi-static model simulation; subthreshold analysis; switching errors; voltage falling rates; Analytical models; Capacitance; Computational modeling; Instruments; Low voltage; Physics computing; Predictive models; SPICE; Switches; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
