DocumentCode
1295401
Title
MOSFET transistors fabricated with high permitivity TiO2 dielectrics
Author
Campbell, Stephen A. ; Gilmer, David C. ; Wang, Xiao-chuan ; Hsieh, Ming-ta ; Kim, Hyeon-Seag ; Gladfelter, Wayne L. ; Yan, Jinhua
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
44
Issue
1
fYear
1997
fDate
1/1/1997 12:00:00 AM
Firstpage
104
Lastpage
109
Abstract
Layers of polycrystalline anatase TiO2 have been deposited through the thermal decomposition of titanium tetrakisisopropoxide (TTIP). 500 Å films deposited and annealed in oxygen at 750°C had average roughnesses (Ra) of about 30 Å. Capacitors made from 190 Å layers of TiO2 displayed a voltage dependent accumulation capacitance. This was postulated to be caused by finite width effects in the accumulation layer which we have dubbed the quantum capacitance effect. N-channel transistors made with these films showed near ideal behavior, but mobilities were significantly lower than those of thermal oxide MOSFETs. This mobility reduction was believed to be caused by interface states, which fell below 1011 cm-2 eV-1 at midgap, but rose sharply on either side, unlike the “U” shaped behavior in thermal oxide MOSFET´s
Keywords
MOS capacitors; MOSFET; accumulation layers; annealing; carrier mobility; dielectric thin films; interface states; pyrolysis; semiconductor technology; titanium compounds; 190 angstrom; 500 angstrom; 750 C; MOSFET; N-channel transistors; O2 annealing; Si-TiO2; accumulation layer; average roughnesses; capacitors; finite width effects; high permitivity TiO2 dielectrics; interface states; mobility reduction; near ideal behavior; polycrystalline anatase; quantum capacitance effect; thermal decomposition; titanium tetrakisisopropoxide; voltage dependent accumulation capacitance; Annealing; Dielectric materials; Dielectric substrates; Dielectric thin films; Leakage current; MOSFET circuits; Photonic band gap; Quantum capacitance; Thermionic emission; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.554800
Filename
554800
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