Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n⁺-i-p⁺-i-n⁺ structures

Author

Liu, Y.X. ; Plotka, P. ; Suto, K. ; Oyama, Y. ; Nishizawa, J.

Author_Institution

Dept. of Mater. Sci. & Eng., Tohoku Univ., Sendai, Japan

Volume

44

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

195

Lastpage

197

Abstract

The I-V characteristics of GaAs n⁺-i-p⁺-i-n ⁺ diode structures grown by MLE with source-drain distances from 500 Å to 950 Å have been measured at temperatures ranging from 77 K to 423 K. The analysis of experimental results indicates that the current flows over the static-induction-controlled potential barrier. On this basis, quantitative comparison with thermionic emission theory which assumes injection of ballistic electrons are made

Keywords

III-V semiconductors; atomic layer epitaxial growth; gallium arsenide; high field effects; semiconductor diodes; thermionic electron emission; 500 to 950 A; 77 to 423 K; GaAs; I-V characteristics; MLE-grown structure; carrier injection; n⁺-i-p⁺-i-n⁺ structures; planar-doped barrier; static induction mechanism; static-induction-controlled potential barrier; Ballistic transport; Current measurement; Electrons; Gallium arsenide; Maximum likelihood estimation; Semiconductor diodes; Temperature distribution; Temperature measurement; Thermionic emission; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.554811

Filename

554811

Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n+-i-p+-i-n+ structures

Liu, Y.X. ; Plotka, P. ; Suto, K. ; Oyama, Y. ; Nishizawa, J.

jour

Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n⁺-i-p⁺-i-n⁺ structures