Title :
Pixel X-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experimental determination)
Author :
Bertuccio, G. ; Pullia, A. ; Lauter, J. ; Förster, A. ; Luth, H.
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
2/1/1997 12:00:00 AM
Abstract :
Gallium Arsenide pixel detectors with an area of 170×320 μm2 and thickness of 5 μm, realized by molecular beam epitaxy, have been designed and tested with X- and γ rays. No significant charge trapping effects have been observed, and a charge collection efficiency of 100% has been measured. At room temperature an energy resolution of 671 eV full width at half maximum (FWHM) at 59.54 keV has been obtained, with an electronic noise of 532 eV FWHM. With the detector cooled to 243 K, the electronic noise is reduced to 373 eV FWHM, and the Kα and Kβ lines of the 55Fe spectrum can be resolved. The Fano factor for GaAs has been measured at room temperature with 59.5 keV photons yielding F=0.12±0.01
Keywords :
III-V semiconductors; X-ray detection; X-ray spectrometers; gallium arsenide; photoemission; position sensitive particle detectors; semiconductor counters; semiconductor epitaxial layers; 100 percent; 170 mum; 243 K; 320 mum; 5 mum; 59.5 keV; Fano factor experimental determination; GaAs; GaAs pixel detectors; charge collection efficiency; electronic noise; epitaxial gallium arsenide; high-energy resolution capabilities; molecular beam epitaxy; pixel X-ray detectors; Charge measurement; Current measurement; Electron traps; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Molecular beam epitaxial growth; Temperature measurement; Testing; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
